HMMC-5025 Datasheet, PDF (2/7 Pages) Agilent(Hewlett-Packard) – 2 - 50 GHz Distributed Amplifier

HMMC-5025 DC Specifications/Physical Properties ^[1]
Symbol Parameters and Test Conditions
Units
I_DSS
V_p
V_G2
I_DSOFF(V_G1)
I_DSOFF(V_G2)
θ_ch-bs
Saturated Drain Current
(V_DD = 5.0 V, V_G1 = 0.0 V, V_G2 = open circuit)
First Gate Pinch-off Voltage
(V_DD = 5.0 V, I_DD = 15 mA, V_G2 = open circuit)
Second Gate Self-Bias Voltage
(V_DD = 5.0 V, I_DD = 75 mA)
First Gate Pinch-off Current
(V_DD = 5.0 V, V_G1 = -3.5 V, V_G2 = open circuit)
Second Gate Pinch-off Current
(V_DD = 5.0 V, I_DD = 75 mA, V_G2 = -3.5 V)
Thermal Resistance (T_backside = 25°C)
mA
V
V
mA
mA
°C/W
Note:
1. Measured in wafer form with T_chuck = 25°C. (Except θ_ch-bs.)
Min.
130
-1.7
Typ.
150
2
6
10
63
Max.
170
-0.5
10
HMMC-5025 RF Specifications^[1], V_DD = 5.0 V, I_DD(Q) = 75 mA, Z _in = Z _o = 50 Ω
Symbol
BW
Parameters and Test Conditions
Guaranteed Bandwidth^[2]
Units Min. Typ. Max.
GHz
2
50
S₂₁
∆ S₂₁
RL_in
RL_out
S₁₂
P_-1dB
P_sat
H₂
Small Signal Gain
Small Signal Gain Flatness
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power @ 1dB Gain Compression @ 40 GHz
Saturated Output Power @ 40 GHz
Second Harmonic Power Level (2 < ƒo < 26)
Po(ƒo) = 10 dBm
dB
dB
dB
dB
dB
dBm
dBm
dBc
7.0 8.5
± 0.75 ± 1.5
10 15
10 15
20 30
12
16
-35
H₃
Third Harmonic Power Level (2 < ƒo < 20)
Po(ƒo) = 10 dBm
dBc
-25
NF
Noise Figure (2 – 35 GHz)
Noise Figure (35 – 50 GHz)
dB
5.0
7.0
Notes:
1. Small-signal data measured in wafer form with T_chuck = 25°C. Harmonic data measured on individual devices mounted
in a microcircuit package at T_A = 25°C.
2. Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry.
6-41