SE5450-013 Datasheet, PDF (3/4 Pages) Honeywell Solid State Electronics Center – GaAs Infrared Emitting Diode

SE3450/5450
GaAs Infrared Emitting Diode
Fig. 1 Radiant Intensity vs
Angular Displacement (SE3450)
gra_017.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Angular displacement - degrees
Fig. 3 Radiant Intensity vs
Forward Current
250
Pulsed
200
gra_018.ds4
150
100
50
0.0
0
100 200 300 400 500
Forward current - mA
Fig. 5 Forward Voltage vs
Temperature
1.60
1.55
1.50
1.45
1.40
1.35
I_F = 100 mA
1.30
1.25
1.20
-50 -25 0 25 50 75
Temperature - °C
gra_206.ds4
100 125
Fig. 2 Radiant Intensity vs
Angular Displacement (SE5450)
gra_023.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Angular displacement - degrees
Fig. 4 Forward Voltage vs
Forward Current
1.40
1.35
gra_205.ds4
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0 10 20 30 40 50 60 70 80 90 100
Forward current - mA
Fig. 6 Spectral Bandwidth
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
870 890 910 930 950 970
Wavelength - nm
gra_005.ds4
990 1010
Honeywell reserves the right to make
26
h
changes in order to improve design and
supply the best products possible.