SE5450-013 Datasheet, PDF (2/4 Pages) Honeywell Solid State Electronics Center – GaAs Infrared Emitting Diode

SE3450/5450
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Power Dissipation
150 mW [À]
Operating Temperature Range
-55¡C to 125¡C
Storage Temperature Range
-65¡C to 150¡C
Soldering Temperature (10 sec)
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.43 mW/¡C.
SCHEMATIC
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