SE5450-013 Datasheet, PDF (1/4 Pages) Honeywell Solid State Electronics Center – GaAs Infrared Emitting Diode

SE3450/5450
GaAs Infrared Emitting Diode
FEATURES
• TO-46 metal can package
• Choice of flat window or lensed package
• 90¡ or 20¡ (nominal) beam angle option
• 935 nm wavelength
• Wide operating temperature range
(- 55¡C to +125¡C)
• Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3450/5450 series consists of a gallium arsenide
infrared emitting diode mounted in a TO-46 metal can
package. The SE3450 series has flat window cans
providing a wide beam angle, while the SE5450 series
has glass lensed cans providing a narrow beam angle.
The TO-46 packages offer high power dissipation
capability and are ideally suited for operation in hostile
environment.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3450
.219 (5.56) _DIA.
.208 (5.28)
.188 (4.77) _DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) _DIA.
.137 (3.48)
2
.048(1.22)
.015
(0.36)
.153 (3.89)
.140 (3.56)
.028(.71)
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_003a.ds4
SE5450
.219 (5.56) _DIA.
.208 (5.28)
.188 (4.77) _DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1
NOM
.160 (4.06) _DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
.015
(0.36)
.200
5.08
2
.048(1.22)
.028(.71)
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_003b.ds4
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24
h
changes in order to improve design and
supply the best products possible.