HMC484MS8G_10 Datasheet, PDF (7/8 Pages) Hittite Microwave Corporation – GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz

11
HMC484MS8G / 484MS8GE
v04.0608
UED _{Pin Descriptions}
TIN ^{Pin Number}
Function
N 1
A
ISCO ^{T 2}
B
D ^{DUCDesigns 3,5,8}
RFC, RF1, RF2
PRO_ended ^{for New 4}
Vdd
Not ^{Recomm 6, 7}
GND
GaAs MMIC 10 WATT T/R SWITCH
DC - 3 GHz
Description
See truth table and control voltage table.
See truth table and control voltage table.
This pin is DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
Supply Voltage
Package bottom must also
be connected to PCB RF ground.
Interface Schematic
Typical Application Circuit
11 - 7
Notes:
1. Set logic gate and switch Vdd = +3V to +10V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +10 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com