HMC484MS8G_10 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs MMIC 10 WATT T/R SWITCH DC - 3 GHz

11
HMC484MS8G / 484MS8GE
v04.0608
UED _{Bias Voltage & Current}
TIN Vdd (Vdc)
+3
N ₊₅
ISCO ^{T +8}
D ^{DUC esigns +10}
Typical Idd (µA)
0.5
10
50
75
PRO ^{for New D Control Voltages}
ended ^State
Low
Not ^{Recomm High}
Bias Condition
0 to +0.2 Vdc @ 10 µA Typical
Vdd ± 0.2 Vdc @ 10 µA Typical
GaAs MMIC 10 WATT T/R SWITCH
DC - 3 GHz
Absolute Maximum Ratings
RF Input Power (Vctl = 0V/+8V)
(0.5 - 3 GHz)
Supply Voltage Range (Vdd)
(Vctl = 0V)
Control Voltage Range (A & B)
Hot Switch Power Level
(Vdd = +8V)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 25 mW/°C above 85 °C)
Thermal Resistance
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+40 dBm (T = +85 °C)
+13 Vdc
Vdd - 13 Vdc to Vdd + 0.7 Vdc
39 dBm
150 °C
1.6 W
40 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Truth Table
Control Input (Vctl)
A
B
High
Low
Low
High
Low
Low
Signal Path State
RFC to RF1 RFC to RF2
Off
On
On
Off
Off
Off
Typical 0.5 to 3.0 GHz
Compression vs. Bias Voltage (Vdd)
Note: DC blocking capacitors are required at ports RFC,
RF1 and RF2. Their value will determine the lowest trans-
mission frequency.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Bias Vdd
(Volts)
+3
+5
+8
+10
Input Power for 0.1 dB
Compression
(dBm)
32
36
39
>40
Input Power for 1.0 dB
Compression
(dBm)
35.5
40
>40
>40
11 - 5
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