HMC454ST89 Datasheet, PDF (7/14 Pages) Hittite Microwave Corporation – InGaP HBT 1/2 WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz

v02.0404
MICROWAVE CORPORATION
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
RF Input Power (RFin)(Vs = +5.0 Vdc) +20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 13.6 mW/°C above 85 °C)
0.890 W
Thermal Resistance
(junction to ground paddle)
73 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
HMC454ST89
InGaP HBT ½ WATT HIGH IP3
AMPLIFIER, 0.4 - 2.5 GHz
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S
OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/Ag SPOT PLATING.
3. LEAD PLATING: 80Sn/20Pb
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
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