HMC716LP3 Datasheet, PDF (6/10 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz

v02.1009
HMC716LP3 / 716LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
Absolute Bias Resistor
7
Range & Recommended Bias Resistor Values
Vdd (V)
Rbias (Ω)
Idd (mA)
Min
Max
Recommended
2.2k
20
3V
2k ^[1]
Open Circuit
5.6k
30
47k
41
270
48
5V
0
Open Circuit
820
65
2.2k
81
[1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended.
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 11.1 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5V
+10 dBm
150 °C
0.72 W
90 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Supply Voltage
(Rbias = 820 Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V)
Vdd (V)
Idd (mA)
2.7
31
3.0
41
3.3
51
4.5
51
5.0
65
5.5
80
Note: Amplifier will operate over full voltage ranges shown above.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
7-6