HMC716LP3 Datasheet, PDF (1/10 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 3.1 - 3.9 GHz

v02.1009
7
Typical Applications
The HMC716LP3(E) is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functional Diagram
HMC716LP3 / 716LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 3.1 - 3.9 GHz
Features
Noise Figure: 1 dB
Gain: 18 dB
Output IP3: +33 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm²
General Description
The HMC716LP3(E) is a GaAs pHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 3.1 and 3.9 GHz. The amplifier
has been optimized to provide 1 dB noise figure,
18 dB gain and +33 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC716LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
7-1
Electrical Specifications
T_A = +25 °C, Rbias = 820Ω for Vdd = 5V, Rbias = 47k Ω for Vdd = 3V ^[1]
Parameter
Vdd = +3V
Min.
Typ.
Max.
Vdd = +5V
Min.
Typ.
Frequency Range
3.1 - 3.9
3.1 - 3.9
Gain
13
17
15.5
18
Gain Variation Over Temperature
0.01
0.01
Noise Figure
1
1.3
1
Input Return Loss
25
30
Output Return Loss
13
16
Output Power for 1 dB Compression (P1dB)
12
15
16
19
Saturated Output Power (Psat)
16.5
20.5
Output Third Order Intercept (IP3)
26
33
Supply Current (Idd)
41
55
65
[1] Rbias resistor sets current, see application circuit herein
Max.
1.3
90
Units
MHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]