HMC693 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz

v03.1108
HMC693
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 27 - 34 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
2, 4,
6, 10,
12, 14
Vgg1t, Vgg2t
Vgg3t, Vgg3b
Vgg2b, Vgg1b
Description
This pad is AC coupled
and matched to 50 Ohm.
Gate control for amplifier. Adjust to achieve recommended
bias current. Please follow “MMIC Amplifier Biasing
Procedure” Application Note. External bypass capacitors of
100pF and 0.1uF are required
3, 5,
7, 9,
11, 13
8
Die Bottom
Vdd1t, Vdd2t
Vdd3t, Vdd3b
Vdd2b, Vdd1b
RFOUT
GND
Power Supply voltage for amplifier. External bypass
capacitors of 100pF and 0.1uF are required.
This pad is AC coupled
and matched to 50 Ohm.
Die bottom must be connected to RD/DC ground.
Interface Schematic
3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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