HMC693 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz

v03.1108
Typical Applications
The HMC693 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC693
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 27 - 34 GHz
Features
Saturated Output Power: +30 dBm @ 23% PAE
Output IP3: +37 dBm
Gain: 17.5 dB
DC Supply: +5V @ 800mA
50 Ohm Matched Input/Output
Die Size: 2.53 x 2.43 x 0.1 mm
General Description
The HMC693 is a two stage GaAs PHEMT MMIC
1 Watt Power Amplifier which operates between
27 and 34 GHz. The HMC693 provides 17.5 dB of
gain, and +30 dBm of saturated output power at
23% PAE from a +5V supply. The RF I/Os are
DC blocked and matched to 50 Ohms for ease of
integration into Multi-Chip-Modules (MCMs). All data
is taken with the chip in a 50 Ohm test fixture
connected via 0.025 mm (1 mil) diameter wire bonds
of length 0.31 mm (12 mils).
3-1
Electrical Specifications, T_A = +25° C,
Vdd = Vdd1-3t = Vdd1-3b = +5V, Idd = 800mA, Vgg = Vgg1-3t = Vgg1-3b ^[1]
Parameter
Min.
Typ.
Max.
Frequency Range
27 - 29.5
Gain
16
18.5
Gain Variation Over Temperature
0.023
Input Return Loss
17
Output Return Loss
34
Output Power for 1 dB
Compression (P1dB)
27
30
Saturated Output Power (Psat)
30.8
Output Third Order Intercept (IP3)^[2]
38
Total Supply Current (Idd)
800
1100
[1] Adjust Vgg between -2 to 0V to achieve Idd= 800mA typical.
[2] Measurement taken at 5V @ 800mA, Pin / Tone = +10 dBm
Min.
Typ.
Max.
29.5 - 31.4
15
17.5
0.014
17
24
27
30
31
38
800
1100
Min.
Typ.
Max.
31.4 - 34
14
16.5
0.016
14
19
27
29
29.6
37
800
1100
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]