HMC693 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 27 - 34 GHz

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HMC693
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 27 - 34 GHz
Gain & Power vs. Supply Current @ 30 GHz
35
30
25
Gain
P1dB
Psat
20
15
10
5
0
500
600
700
800
900
1000 1100
Idd Supply Current (mA)
Reverse Isolation vs. Frequency
Over Temperature, 5V @ 800mA
0
-10
-20
+25 C
+85 C
-30
-55 C
-40
-50
-60
-70
-80
26 27 28 29 30 31 32 33 34 35
FREQUENCY (GHz)
Gain & Power vs. Supply Voltage @ 30 GHz
35
30
25
Gain
P1dB
20
Psat
15
10
5
0
4.5
5
5.5
Vdd (V)
Power Dissipation, 5V @ 800mA
5
4.75
4.5
4.25
27 GHz
28 GHz
30 GHz
32 GHz
34 GHz
4
3.75
3.5
3.25
3
0
2
4
6
8 10 12 14 16 18
INPUT POWER (dBm)
3
Absolute Maximum Ratings
RF Input Power (RFIN)(Vdd = 5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 76.9 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+20 dBm
175 °C
6.9 W
13 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+4.5
785
+5.0
800
+5.5
790
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 800mA at +5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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