HMC637 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

v03.0709
HMC637
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Pad Descriptions
Pad Number
Function
1
IN
2
Vgg2
3
ACG1
Description
This pad is DC coupled and matched
to 50 Ohms. Blocking capacitor is required.
Gate control 2 for amplifier. Attach bypass
capacitors per application circuit herein. For nominal
operation +6V should be applied to Vgg2.
Low frequency termination. Attach bypass
capacitor per application circuit herein.
4
ACG2
Low frequency termination. Attach bypass
capacitor per application circuit herein.
5
6, 7
8
Die Bottom
OUT & Vdd
ACG3, ACG4
Vgg1
GND
RF output for amplifier. Connect DC bias (Vdd) network to
provide drain current (Idd). See application circuit herein.
Low frequency termination. Attach bypass
capacitor per application circuit herein.
Gate control 1 for amplifier. Attach bypass
capacitors per application circuit herein. Please
follow “MMIC Amplifier Biasing Procedure”
application note.
Die bottom must be connected to RF/DC ground.
Interface Schematic
3
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Application Support: Phone: [phone] or [e-mail]
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