HMC637 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

v03.0709
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+14 Vdc
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
+4 to +7V
RF Input Power (RFIN)(Vdd = +12V Vdc) +25 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 106 mW/°C above 85 °C)
6.9 W
Thermal Resistance
(channel to die bottom)
9.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
HMC637
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Typical Supply Current vs. Vdd
Vdd (V)
11.5
12.0
12.5
Idd (mA)
375
400
430
3
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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