HMC637 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs MESFET MMIC 1 WATT POWER AMPLIFIER, DC - 6 GHz

v03.0709
Typical Applications
The HMC637 is ideal for:
• Telecom Infrastructure
3
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC637
GaAs MESFET MMIC 1 WATT
POWER AMPLIFIER, DC - 6 GHz
Features
P1dB Output Power: +29 dBm
Gain: 14 dB
Output IP3: +41 dBm
Bias Supplies: +12V, +6V, -1V
50 Ohm Matched Input/Output
Die Size: 2.98 x 2.48 x 0.1 mm
General Description
The HMC637 is a GaAs MMIC MESFET Distributed
Power Amplifier die which operates between DC and
6 GHz. The amplifier provides 14 dB of gain,
+41 dBm output IP3 and +29 dBm of output power
at 1 dB gain compression while requiring 400mA
from a +12V supply. Gain flatness is excellent at ±0.5
dB from DC to 6 GHz making the HMC637 ideal for
EW, ECM, Radar and test equipment applications.
The HMC637 amplifier I/Os are internally matched
to 50 Ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
3-1
Electrical Specifications, T_A = +25° C, Vdd= +12V, Vgg2= +6V, Idd= 400mA*
Parameter
Min.
Frequency Range
Gain
11
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)
* Adjust Vgg1 between -2V to 0V to achieve Idd= 400mA typical.
Typ.
DC - 6
14
±0.5
±2
13
18
29
30
41
5
400
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]