HMC415LP3 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz

v02.0604
MICROWAVE CORPORATION
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
Pin Descriptions
Pin Number
Function
Description
8
Interface Schematic
1
Vcc
Power supply voltage for the first amplifier stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
2, 3, 5, 6, 7,
8, 9, 12, 13,
15, 16
4
GND
Ground: Backside of package has exposed metal ground slug that must be
connected to ground thru a short path. Vias under the device are required.
RF IN
This pin is AC coupled and matched to 50 Ohms from 5.0 to 6.0 GHz.
10, 11
RF OUT
RF output and DC bias for the output stage.
Power control pin. For maximum power, this pin should be connected to
14
Vpd
3.0V. A higher voltage is not recommemded. For lower idle current, this
voltage can be reduced.
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