HMC415LP3 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz

v02.0604
MICROWAVE CORPORATION
HMC415LP3
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
8
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+5.0 Vdc
Control Voltage (Vpd)
+3.5 Vdc
RF Input Power (RFin)(Vs = Vpd = +3.0 Vdc) +20 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 17 mW/°C above 85 °C)
1.105 W
Thermal Resistance
(junction to ground paddle)
59 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Outline Drawing
8 - 192
NOTES:
1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB
LAND PATTERN.
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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
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