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HMC413QS16G_09 Datasheet, PDF (6/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
v04.0505
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Pin Descriptions
Pin Number
Function
1, 2, 4, 5, 7, 8,
9, 10, 13, 15
GND
Description
Ground: Backside of package has exposed metal ground slug that
must be connected to ground thru a short path. Vias under the device
are required.
Interface Schematic
3, 14
Vpd1, Vpd2
Power Control Pin. For maximum power, this pin should be connected
to 3.6V. For 5V operation, a dropping resistor is required. A higher
voltage is not recommended. For lower idle current, this voltage can
be reduced.
11
6
11, 12
RFIN
This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz.
RFOUT
RF output and bias for the output stage.
Power supply voltage for the first amplifier stage. An external bypass
16
Vcc
capacitor of 330 pF is required as shown in the application schematic.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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