HMC413QS16G_09 Datasheet, PDF (5/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz

v04.0505
11
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd1, Vpd2)
RF Input Power (RFIN)(Vs = +5Vdc,
Vpd = +3.6 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+4.0 Vdc
+15 dBm
150 °C
1.56 W
42 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
11 - 54
Package Information
Part Number
Package Body Material
HMC413QS16G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC413QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 ^[1]
MSL1 ^[2]
Package Marking ^[3]
HMC413
XXXX
HMC413
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com