HMC498_10 Datasheet, PDF (5/6 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz

v02.0110
HMC498
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
3
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled and matched to 50 Ohms.
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01 μF are required.
5
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Gate control for amplifier. Adjust to achieve Idd of 250mA.
6
Vgg
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF
and 0.01 μF are required.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Assembly Diagram
3 - 54
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