HMC498_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz

v02.0110
Typical Applications
The HMC498 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC498
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
Features
Output IP3: +34 dBm
Saturated Power: +27 dBm @ 25% PAE
Gain: 24 dB
Supply Voltage: +5V
50 Ohm Matched Input/Output
Die Size: 2.38 x 1.46 x 0.1 mm
General Description
The HMC498 is a high dynamic range GaAs pHEMT
MMIC Power Amplifier which operates between
17 and 24 GHz. The HMC498 provides 24 dB of gain,
+27 dBm of saturated power and 25% PAE from
a +5V supply voltage. The HMC498 amplifier can
easily be integrated into Multi-Chip-Modules (MCMs)
due to its small size. All data is with the chip in a
50 Ohm test fixture connected via 0.025mm (1 mil)
diameter wire bonds of minimal length 0.31mm (12
mils).
Electrical Specifications, T_A = +25° C, Vdd = 5V, Idd = 250mA*
Parameter
Min. Typ. Max. Min. Typ. Max. Min.
Frequency Range
17 - 19
19 - 22
Gain
20
23
28
21
24
28 20
Gain Variation Over Temperature
0.03 0.04
0.03 0.04
Input Return Loss
11
11
Output Return Loss
20
18
Output Power for 1 dB Compression (P1dB)
20
23.5
22
25
21
Saturated Output Power (Psat)
27
26.5
Output Third Order Intercept (IP3)
34
34
Noise Figure
3.5
4.0
Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)
250
275
250
275
Typ.
22 - 24
23
0.03
8
15
24
25.5
34
4.5
250
Max.
28
0.04
275
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
3 - 50
* Adjust Vgg between -2 to 0V to achieve Idd = 250mA typical.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com