HMC498_10 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz

v02.0110
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +5V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 29 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5V
-4 to 0V
+10 dBm
175 °C
2.65 W
34 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
Outline Drawing
HMC498
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+4.5
241
+5.0
250
+5.5
258
+3.0
240
+3.5
250
+4.0
259
Note: Amplifier will operate over full voltage ranges shown above.
Vgg adjusted to achieve Idd= 250mA at +5V and +3.5V.
3
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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