HMC619LP5 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz

v07.0908
Power Compression @ 1 GHz
32
28
Pout
Gain
24
PAE
20
16
12
8
4
0
0
4
8
12
16
20
INPUT POWER (dBm)
Power Compression @ 10 GHz
32
28
Pout
Gain
24
PAE
20
16
12
8
4
0
0
4
8
12
16
20
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +12 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 65 mW/°C above 85 °C)
Thermal Resistance
(channel to package bottom)
Storage Temperature
Operating Temperature
13 Vdc
-2.5 to 0 Vdc
+4V to +6V
27 dBm
150 °C
4.2 W
15.3 °C/W
-65 to 150 °C
-40 to 85 °C
HMC619LP5 / 619LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Power Compression @ 5 GHz
32
28
Pout
Gain
24
PAE
20
16
12
8
4
0
0
4
8
12
16
20
INPUT POWER (dBm)
6
Power Dissipation
10
9
Max Pdis @ 85C
2 GHz
8
6 GHz
7
6
5
4
3
2
-10
-5
0
5
10
15
20
INPUT POWER (dBm)
Typical Supply Current vs. Vdd
Vdd (V)
11.5
12.0
12.5
Idd (mA)
299
300
301
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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