HMC619LP5 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, DC - 10 GHz

v07.0908
Typical Applications
The HMC619LP5(E) wideband PA is ideal for:
• Telecom Infrastructure
6
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC619LP5 / 619LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 10 GHz
Features
P1dB Output Power: +27 dBm
Gain: 11 dB
Output IP3: +37 dBm
Supply Voltage: +12V @ 300 mA
50 Ohm Matched Input/Output
32 Lead 5x5mm Lead SMT Package: 25mm²
General Description
The HMC619LP5(E) is a GaAs MMIC PHEMT
Distributed Power Amplifier die which operates bet-
ween DC and 10 GHz. The amplifier provides 11 dB
of gain, +37 dBm output IP3 and +27 dBm of output
power at 1 dB gain compression while requiring 300
mA from a +12V supply. Gain flatness is excellent at
±0.5 dB from DC - 10 GHz making the HMC619LP5(E)
ideal for EW, ECM, Radar and test equipment
applications. The HMC619LP5(E) amplifier I/Os are
internally matched to 50 ohms.
6 - 324
Electrical Specifications, T_A = +25° C, Vdd= +12V, Vgg2= +5V, Idd= 300 mA*
Parameter
Min. Typ. Max.
Frequency Range
DC - 2.0
Gain
10
12
Gain Flatness
±0.5
Gain Variation Over Temperature
0.016
Input Return Loss
11
Output Return Loss
16
Output Power for 1 dB Compression (P1dB)
28
Saturated Output Power (Psat)
29
Output Third Order Intercept (IP3)
41
Noise Figure
5
Supply Current
300
(Idd) (Vdd= +12V, Vgg1= -0.8V Typ.)
* Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
Min.
Typ. Max.
2.0 - 8.0
9
11
±0.25
0.02
12.5
16
25
27
28
37
5
300
Min.
Typ. Max.
8.0 - 10.0
8
10.5
±0.5
0.03
17
12
23
25
25.5
32
7
300
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com