HMC465LP5 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 20.0 GHz

v00.0404
HMC465LP5
MICROWAVE CORPORATION
GaAs PHEMT MMIC MODULATOR DRIVER
AMPLIFIER, DC - 20.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9.0 Vdc
Gate Bias Voltage (Vgg1)
-2.0 to 0 Vdc
Gate Bias Voltage (Vgg2)
(Vdd -8.0) Vdc to Vdd
RF Input Power (RFin)(Vdd = +8.0 Vdc) +23 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
1.56 W
Thermal Resistance
(channel to ground paddle)
41.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
161
160
159
8
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY
3. LEAD AND GRPUND PADDLE PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT
SHALL BE 0.25mm MAX
7. PACKAGE WRAP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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