HMC463LP5_11 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER, 2 - 20 GHz

v08.0511
Gain @ Several Control Voltages (Vgg2)
18
13
8
3
-2
Vgg2 = -1.3V
Vgg2 = -0.8V
Vgg2 = -1.2V
Vgg2 = -0.6V
Vgg2 = -1.1V
Vgg2 = -0.4V
-7
Vgg2 = -1.0V
Vgg2 = -0.9V
Vgg2 = -0.2V
Vgg2 = 0V
-12
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
HMC463LP5 / 463LP5E
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Current (Igg1)
Gate Bias Voltage (Vgg2)(AGC)
RF Input Power (RFIN)(Vdd = +5V)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 19.1 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+9V
-2 to 0V
2.5 mA
(Vdd -9) Vdc to +2V
+18 dBm
150 °C
1.24 W
52.3 °C/W
-65 to +150 °C
-40 to +85 °C
7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
Idd (mA)
58
60
62
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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