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HMC464LP5_09 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz
v03.0308
11
P1dB vs. Temperature
30
28
26
24
22
20
18
+25C
+85C
16
-40C
14
12
10
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Output IP3 vs. Temperature
36
34
32
30
28
26
24
22
+25C
+85C
20
-40C
18
16
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+9 Vdc
-2 to 0 Vdc
(Vdd -8.0) Vdc to Vdd
+20 dBm
150 °C
3.35 W
19.4 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
Psat vs. Temperature
30
28
26
24
22
20
18
+25C
+85C
16
-40C
14
12
10
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Gain, Power & Output IP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg1
32
30
28
26
24
22
Gain
20
P1dB
Psat
18
IP3
16
14
12
10
7.5
8
8.5
Vdd (V)
Typical Supply Current vs. Vdd
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
292
290
288
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11 - 260
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com