HMC464LP5_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 2 - 20 GHz

v03.0308
11
Typical Applications
The HMC464LP5 / HMC464LP5E is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C³I
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC464LP5 / 464LP5E
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
Features
P1dB Output Power: +26 dBm
Gain: 14 dB
Output IP3: +30 dBm
Supply Voltage: +8V @ 290 mA
50 Ohm Matched Input/Output
25 mm² Leadless SMT Package
General Description
The HMC464LP5 & HMC464LP5E are GaAs MMIC
PHEMT Distributed Power Amplifiers in leadless 5 x
5 mm surface mount packages which operate bet-
ween 2 and 20 GHz. The amplifier provides 14 dB
of gain, +30 dBm output IP3 and +26 dBm of output
power at 1 dB gain compression while requiring
290 mA from a +8V supply. Gain flatness is good
from 2 - 18 GHz making the HMC464LP5(E) ideal for
EW, ECM and radar driver amplifiers as well as test
equipment applications. The wideband amplifier I/O’s
are internally matched to 50 Ohms.
11 - 258
Electrical Specifications, T_A = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA ^[1]
Parameter
Min. Typ. Max.
Frequency Range
2.0 - 6.0
Gain
12
14
Gain Flatness
±0.5
Gain Variation Over Temperature
0.025 0.035
Input Return Loss
15
Output Return Loss
15
Output Power for 1 dB Compression
(P1dB)
23.5 26.5
Saturated Output Power (Psat)
27.5
Output Third Order Intercept (IP3)
32
Noise Figure
4.0
Supply Current
290
(Idd) (Vdd= 8V, Vgg= -0.5V Typ.)
[1] Adjust Vgg1 between -2 to 0V to achieve Idd = 290 mA typical.
Min.
Typ.
Max.
6.0 - 16.0
11.5
13.5
±0.5
0.03
0.04
10
9
22
25
26
26
4.0
290
Min.
Typ.
Max.
16.0 - 20.0
8
11
±1.0
0.05
0.06
7
11
18
21
24.0
22
6.0
290
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com