HMC462LP5_10 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz

HMC462LP5 / 462LP5E
v04.1010
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
7
P1dB vs. Temperature
20
Psat vs. Temperature
20
17
17
14
11
8
+25C
+85C
-40C
5
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
14
11
+25C
+85C
-40C
8
5
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Output IP3 vs. Temperature
30
27
24
21
18
+25C
+85C
-40C
15
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Gain, Power, Noise Figure & Supply
Current vs. Supply Voltage @ 10 GHz
22
72
20
70
18
68
16
66
14
64
12
62
10
8
Gain
P1dB
6
Noise Figure
60
Idd
58
56
4
54
2
52
0
50
4.5
5
5.5
Vdd (V)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 50 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+9 Vdc
+18 dBm
150 °C
3.25 W
52 °C/W
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+7.5
+8.0
+8.5
Idd (mA)
66
67
68
71
72
73
7-3
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]