HMC462LP5_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 20 GHz

HMC462LP5 / 462LP5E
v04.1010
GaAs pHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
7
Typical Applications
The HMC462LP5 / HMC462LP5E Wideband LNA is
ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C³I
• Test Instrumentation
• Fiber Optics
Functional Diagram
Features
Noise Figure: 2.5 dB @ 10 GHz
Gain: 13 dB
P1dB Output Power: +14.5 dBm @ 10 GHz
Self-Biased: +5V @ 66mA
50 Ohm Matched Input/Output
25 mm² Leadless SMT Package
General Description
The HMC462LP5 & HMC462LP5E are GaAs MMIC
pHEMT Low Noise Distributed Amplifiers in leadless
5x5 mm surface mount packages which operate
between 2 and 20 GHz. The self-biased amplifier
provides 13 dB of gain, 2.5 to 3.5 dB noise figure and
+14.5 dBm of output power at 1 dB gain compression
while requiring only 66 mA from a single +5V supply.
Gain flatness is excellent from 6 - 18 GHz making
the HMC462LP5 & HMC462LP5E ideal for EW,
ECM RADAR and test equipment applications. The
wideband amplifier I/Os are internally matched to 50
Ohms and are internally DC blocked.
7-1
Electrical Specifications, T_A = +25° C, Vdd= 5V
Parameter
Min.
Typ.
Max.
Min.
Frequency Range
2-6
Gain
12
14
11
Gain Flatness
±0.5
Gain Variation Over Temperature
0.015 0.025
Noise Figure
3.0
4.0
Input Return Loss
15
Output Return Loss
12
Output Power for 1 dB Compression (P1dB)
12
15
11
Saturated Output Power (Psat)
17
Output Third Order Intercept (IP3)
26
Supply Current
(Idd) (Vdd= 5V)
66
85
Typ.
6 - 14
13
±0.5
0.02
2.5
13
12
14
16
25
66
Max.
0.03
4.0
85
Min.
Typ.
Max. Units
14 - 20
GHz
10
12
dB
±0.5
dB
0.03
0.04 dB/ °C
4.0
6.0
dB
11
dB
8
dB
9
12
dBm
15
dBm
22
dBm
66
85
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]