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HMC453QS16G_06 Datasheet, PDF (12/22 Pages) Hittite Microwave Corporation – InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz
v01.0205
HMC453QS16G / 453QS16GE
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Power Dissipation
4.5
4
Max Pdiss @ +85C
3.5
1900 MHz
3
2.5
2
900 MHz
1.5
1
0
5
10
15
20
25
INPUT POWER (dBm)
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Control Voltage (Vpd)
+5.4 Vdc
RF Input Power (RFin)(Vs = Vpd = +5.0 Vdc) +32 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 58.5 mW/°C above 85 °C)
3.8 W
Thermal Resistance
(junction to ground paddle)
17.1 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC453QS16G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC453QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H453
XXXX
H453
XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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