BB601M Datasheet, PDF (9/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Gain Reduction vs.
Gate2 to Source Voltage
0
10
20
30
V_DS = V_G1 = 5 V
40 ^{VG2S = 4 V}
R G = 47 kΩ
50
4
3
2
1
0
Gate2 to Source Voltage V _G2S (V)
BB601M
9