BB601M Datasheet, PDF (1/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB601M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-702C (Z)
4th. Edition
Nov. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
PG = 21.5 dB typ. at f = 900 MHz
• Low noise;
NF = 1.85 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143mod)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “AT–”.
2. BB601M is individual type number of HITACHI BBFET.