BB601M Datasheet, PDF (4/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB601M
900MHz Power Gain, Noise Test Circuit
VG1 VG2
C4
C5
VD
C6
Input
R1
R2
C3
G2
G1
L1 L2
R3
RFC
D
Output
L3 L4
S
C1
C2
C1, C2 :
C3 :
C4 — C6 :
R1 :
R2 :
R3 :
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
47 kΩ
47 kΩ
4.7 kΩ
L1:
10
21
L3:
29
L2:
26
L4:
18
(φ1mm Copper wire)
Unit: mm
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
4