HA22022 Datasheet, PDF (8/12 Pages) Hitachi Semiconductor – GaAs MMIC Low Noise Amplifier for Micro Wave Application

HA22022
Power Gain vs. Temperature
20
Vdd = 3 V
f = 1.5 GHz
15
10
5
0
—25
0
25
50
75
Ambient Temperature Ta (°C)
Noise Figure vs. Temperature
4
Vdd = 3 V
f = 1.5 GHz
3
2
1
0
—25
0
25
50
75
Ambient Temperature Ta (°C)
VSWR vs. Temperature
5
Vdd = 3 V
f = 1.5 GHz
4
3
2 _input
output
1
—25
0
25
50
75
Ambient Temperature Ta (°C)
Pout @ 1dB Gain Compression, 3rd Order
Inter—cept Point (out) vs. Ambient Temperature
20
Vdd = 3 V
f = 1.5 GHz
15 ^{ud = 1.5006 GHz}
IP3o
10
5
P1dB
0
—5
—25
0
25
50
75
Ambient Temperature Ta (°C)
8