HA22022 Datasheet, PDF (2/12 Pages) Hitachi Semiconductor – GaAs MMIC Low Noise Amplifier for Micro Wave Application

HA22022
Absolute Maximum Ratings (Ta = 25°C)
Item
Supply voltage
Maximum current
Power dissipation
Channel temperature
Storage temperature
Operation temperature
Maximum input power
Symbol
Vdd
Idd
Pd
Tch
Tstg
Topr
Pin max
Ratings
5
6
100
150
–55 to +125
–20 to +70
+15
Unit
V
mA
mW
°C
°C
°C
dBm
Electrical Characteristics (Ta = 25°C, Vdd = 3V)
Item
Quiescent current
Power gain
Noise figure
Symbol Min Typ Max Unit Test Conditions
Pin
Idd
2
3
5
mA
No signal
PG
14
16
17
dB
f = 1.5 GHz
NF
—
1.3
2
dB
f = 1.5 GHz
Typical Performance (Ta = 25°C, Vdd = 3V)
Item
Symbol
Typ
Unit
Test Conditions
Pin
VSWR (input)
VSWR in 1.7
—
f = 1.5 GHz
4
VSWR (output)
VSWR out 1.7
—
f = 1.5 GHz
1
3rd order intermodulation
IM3
distortion
58
dB
f = 1.5 GHz, Pin = –30 dBm
2