HA22022 Datasheet, PDF (6/12 Pages) Hitachi Semiconductor – GaAs MMIC Low Noise Amplifier for Micro Wave Application

HA22022
Main Characteristics
Power Gain vs. Frequency
20
Vdd = 3 V
Ta = +25°C
15
10
5
0
1.0
1.5
2.0
2.5
Frequency f (GHz)
Noise Figure vs. Frequency
4
3
2
1
Vdd = 3 V
Ta = +25°C
0
1.0
1.5
2.0
2.5
Frequency f (GHz)
VSWR vs. Frequency
6
Vdd = 3 V
Ta = +25°C
5
input
4
3
output
2
1
1.0
1.5
2.0
2.5
Frequency f (GHz)
Output Power, 3rd Order Inter—
modlation Distortion vs. Input Power
20
Vdd = 3 V
f = 1.5 GHz
0 ^{ud = 1.5006 GHz}
Ta = +25°C
—20
Pout
—40
im3
—60
—80
—60 —50 —40 —30 —20 —10 0 10
Input Power Pin (dBm)
6