BB501C Datasheet, PDF (8/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501C
Drain Current vs. Gate Resistance
20
15
10
5
V_DS = V_G1 = 5 V
V_G2S = 4 V
0
10
20
50
100
Gate Resistance R _G (k Ω )
Power Gain vs.
Gate2 to Source Voltage
25
20
15
10
V _DS = 5 V
5
R G = 47 kЊ
f = 900 MHz
0
1
2
3
4
Gate2 to Source Voltage V _G2S (V)
Noise Figure vs.
Gate2 to Source Voltage
5
V _DS = 5 V
4
R G = 47 kЊ
f = 900 MHz
3
2
1
1
2
3
4
Gate2 to Source Voltage V _G2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
4
3
2
1 V _DS = 5 V
R G = 47 kЊ
f = 1 MHz
0
0
1
2
3
4
Gate2 to Source Voltage V _G2S (V)
8