BB501C Datasheet, PDF (2/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
V_DS
V_G1S
Gate2 to source voltage
V_G2S
Drain current
I_D
Channel power dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Drain to source breakdown V_(BR)DSS
6
—
voltage
Gate1 to source breakdown V_(BR)G1SS
+6
—
voltage
Gate2 to source breakdown V_(BR)G2SS
+6
—
voltage
Gate1 to source cutoff current I_G1SS
—
—
Gate2 to source cutoff current I_G2SS
—
—
Gate1 to source cutoff voltage V_G1S(off)
0.5
0.7
Gate2 to source cutoff voltage V_G2S(off)
0.5
0.7
Drain current
I _D(op)
7
10
Forward transfer admittance |y_fs|
19
24
Ratings
6
+6
–0
+6
–0
20
100
150
–55 to +150
Max Unit
—
V
—
V
—
V
+100 nA
+100 nA
1.0
V
1.0
V
13
mA
29
mS
Input capacitance
c _iss
Output capacitance
c _oss
Reverse transfer capacitance c_rss
Power gain
PG
Noise figure
NF
1.4
1.7
2.0
pF
0.7
1.1
1.5
pF
—
0.019 0.04 pF
17
21.5 —
dB
—
1.85 2.4
dB
Unit
V
V
V
mA
mW
°C
°C
Test Conditions
I_D = 200µA
V_G1S = V_G2S = 0
I_G1 = +10µA
V_G2S = V_DS = 0
I_G2 = +10µA
V_G1S = V_DS = 0
V_G1S = +5V
V_G2S = V_DS = 0
V_G2S = +5V
V_G1S = V_DS = 0
V_DS = 5V, V_G2S = 4V
I_D = 100µA
V_DS = 5V, V_G1S = 5V
I_D = 100µA
V_DS = 5V, V_G1 = 5V
V_G2S = 4V, R_G = 47kΩ
V_DS = 5V, V_G1 = 5V
V_G2S =4V
R_G = 47kΩ, f = 1kHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 47kΩ
f = 1MHz
V_DS = 5V, V_G1 = 5V
V_G2S =4V, R_G = 47kΩ
f = 900MHz
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