BB501C Datasheet, PDF (6/13 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501C

Drain Current vs. Gate1 Voltage
20
V_DS = 5 V
R_G = 68 kЊ
16
12
8
3V ^4V
4
2V
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V _G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 33 kЊ
24 _{f = 1 kHz}
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
(BUF
7PMUBHF



7
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7
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 47 kЊ
24 _{f = 1 kHz}
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
(BUF
7PMUBHF



7
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</sub>


7
Forward Transfer Admittance
vs. Gate1 Voltage
30
V_DS = 5 V
R_G = 68 kЊ
24 _{f = 1 kHz}
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
(BUF
7PMUBHF



7
<sub>(

</sub>


7
6