3SK295 Datasheet, PDF (8/10 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK295
S Parameter (V_DS = 4 V, V_G2S = 3 V, I_D = 10 mA, Z_O = 50 )
Freq.
(MHz)
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
0.999
0.998
0.992
0.988
0.985
0.976
0.971
0.964
0.961
0.951
0.949
0.935
0.933
0.923
0.916
0.908
0.900
0.890
0.876
ANG.
–6.1
–9.1
–11.9
–14.8
–17.9
–20.6
–23.2
–26.3
–29.1
–32.2
–35.0
–37.6
–40.5
–42.9
–45.8
–49.0
–51.2
–54.0
–56.4
S21
MAG.
1.98
1.97
1.96
1.96
1.94
1.92
1.91
1.88
1.87
1.86
1.86
1.81
1.78
1.77
1.75
1.72
1.70
1.67
1.65
ANG.
172.2
168.4
165.0
161.0
157.1
153.7
149.9
146.8
142.8
139.4
136.1
132.9
129.4
125.7
122.6
119.1
115.8
112.6
109.3
S12
MAG.
0.00094
0.00189
0.00230
0.00286
0.00364
0.00353
0.00419
0.00495
0.00509
0.00530
0.00550
0.00601
0.00582
0.00572
0.00553
0.00514
0.00543
0.00506
0.00469
ANG.
79.2
80.4
79.5
79.9
75.2
71.8
70.7
65.5
62.7
66.6
63.8
58.2
60.6
58.5
56.3
56.3
52.9
52.4
51.9
S22
MAG.
0.989
0.987
0.986
0.984
0.981
0.978
0.975
0.972
0.968
0.963
0.960
0.956
0.950
0.945
0.941
0.936
0.930
0.924
0.919
ANG.
–4.2
–6.1
–7.9
–9.8
–11.5
–13.4
–15.2
–17.2
–19.1
–20.8
–22.8
–24.5
–26.3
–28.0
–29.9
–31.7
–33.4
–35.2
–37.0
8