3SK295 Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK295
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Symbol Min
V_(BR)DSX
12
V_(BR)G1SS ±8
V_{(BR) G2SS} ±8
I _G1SS
—
I _G2SS
—
I _DS(on)
0.5
Gate 1 to source cutoff voltage V_G1S(off) –0.5
Gate 2 to source cutoff voltage V_G2S(off) 0
Forward transfer admittance |y_fs|
16
Input capacitance
Ciss
1.2
Output capacitance
Coss 0.6
Reverse transfer capacitance Crss
—
Power gain
PG
16
Noise figure
NF
—
Note: Marking is “ZQ–”
Typ
—
—
—
—
—
—
—
—
20.8
1.5
0.9
0.01
19.5
2.0
Max Unit
—
V
—
V
—
V
±100 nA
±100 nA
10
mA
+0.5 V
+1.0 V
—
mS
2.2 pF
1.2 pF
0.03 pF
—
dB
3
dB
Test conditions
I_D = 200 µA , V_G1S = –3 V,
V_G2S = –3 V
I_G1 = ±10 µA, V_G2S = V_DS = 0
I_G2 = ±10 µA, V_G1S = V_DS = 0
V_G1S = ±6 V, V_G2S = V_DS = 0
V_G2S = ±6 V, V_G1S = V_DS = 0
V_DS = 6 V, V_G1S = 0.5V,
V_G2S = 3 V
V_DS = 10 V, V_G2S = 3V,
I_D = 100 µA
V_DS = 10 V, V_G1S = 3V,
I_D = 100 µA
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 1 kHz
V_DS = 6 V, V_G2S = 3V,
I_D = 10 mA, f = 1 MHz
V_DS = 4 V, V_G2S = 3V,
I_D = 10 mA, f = 900 MHz
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