3SK295 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK295
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
• Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
• Capable of low voltage operation
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-387
1st. Edition