2SK1517 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Reverse Drain Current vs.
Source to Drain Voltage
20
16 ^{Pulse Test}
2SK1517, 2SK1518
12
5V
8
10 V
4
V_GS = 0, –10 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
3
D=1
1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
T_C = 25°C
0.3
0.2
0.1
0.1 _0.05
0.02
0.03 0₁.0_S¹_{hot Pulse}
0.01
10 µ
100 µ
θch–c (t) = γ_S (t) · θch–c
θch–c = 1.08°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
R_L
Vin
10 V
50 Ω
V_{D=..D30 V}
Waveforms
90%
Vin _10%
Vout ^10%
10%
90%
90%
t_{d (on)}
t_r
t_{d (off)}
t_f
7