2SK1517 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
6
20 A
4
10 A
2
I_D = 5 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
V_GS = 10 V
0.8
0.6
I_D = 20 A
0.4
10 A
5A
0.2
0
–40 0
40
80 120 160
Case Temperature T_C (°C)
2SK1517, 2SK1518
Static Drain to Source on State
Resistance vs. Drain Current
5
2
Pulse Test
1
0.5
V_GS = 10 V
0.2
15 V
0.1
0.05
1
2
5 10 20 50 100
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 20 V
Pulse Test
2
–25°C
T_C = 25°C
75°C
1
0.5
0.2
0.1
0.05
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
5