2SK1517 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1517, 2SK1518
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
50
10 V 7 V
6V
40
Pulse Test
30
20
5V
10
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
100
30
10
3
1
DC
PW
Opera=tio1n0
10
1
100
ms
µ_s
ms
(T
C
(=12S5h°Cot))
µ_s
0.3
0.1
1
Ta = 25°C
2SK1518
2SK1517
3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
16
V_DS = 20 V
Pulse Test
12
8
75°C
4
25°C
T_C = – 25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4