2SK1300 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
8
5V
4 ^{VGS = 10 V}
0, –5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
2SK1300
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 ^{D = 1}
0.5
0.3
0.2
0.1
0.1 _0.05
0.02
0.03 01.S0h1ot _Pulse
0.01
10 µ
100 µ
T_C = 25°C
1m
10 m
Pulse Width PW (s)
θch–c (t) = γs (t) · θch–c
θch–c = 3.13°C/W, T_C = 25°C
P_DM
TPW
D = ^PTW
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
R_L
50 Ω
Vin = 10 V
V_DD =^.. 30 V
Wavewforms
90 %
Vin 10 %
Vout 10 %
10 %
td _(on)
90 %
90 %
tr
td _(off)
tf
7