2SK1300 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.5
Pulse Test
2.0
10 A
1.5
5A
1.0
0.5
I_D = 2 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
I_D = 10 A
5A
0.4
2A
10 A
5A
0.3
V_GS = 4 V
2A
0.2
10 V
0.1
0
–40
0
40
80 120 160
Case Temperature T_C (°C)
2SK1300
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
V_GS = 4 V
0.2
10 V
0.1
0.05
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 10 V
20 Pulse Test
10
T_C = –25°C
5
25°C
75°C
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
5