2SK1300 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1300
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V
Pulse Test
6V
16
4V
12
3.5 V
8
3V
4
V_GS = 2.5 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
100
Ta = 25°C
30
10 _µs
10
3
1
PW
=
1
10
ms
ms
(1
Shot)
0.3 _{Operation in this area}
0.1 ^{is limited by RDS (on)}
1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4
2 _{TC = 75°C}
25°C
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4