2SK1157 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1157, 2SK1158
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12
8
4
5, 10 V
V_GS = 0, –10 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
3
D=1
1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
T_C = 25°C
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03
1
0.01
Shot
Pulse
0.01
10 µ
100 µ
θch–c (t) = γ_S (t) · θch–c
θch–c = 2.08°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
R_L
50 Ω
Vin = 10 V
V_DD =^.. 30 V
Wavewforms
90 %
Vin 10 %
Vout 10 %
10 %
td _(on)
90 %
90 %
tr
td _(off)
tf
7